Semiconductors Product of the year
Company Name: Efficient Power Conversion (EPC)
Product Name: EPC2366
Supporting Statement:
EPC2366 – 40 V, 850 µΩ Enhancement-Mode GaN Transistor for High Density Power Conversion in AI Servers
The EPC2366 is designed for ultra-high density power conversion in AI servers and data center infrastructure. Housed in an ultra-compact 3.3 mm × 2.6 mm QFN package with dual-side cooling, the EPC2366 delivers sub-1 mΩ on-resistance while enabling exceptional thermal performance and power density.
Compared with best-in-class silicon MOSFETs, EPC2366 offers 15% lower resistance, 50% lower charge, and a 20% smaller footprint. It also represents a one to two-generation technology lead over competing GaN solutions, making it a benchmark device for next-generation AI power architectures.
As GPU power requirements continue to rise, DC-DC conversion stages must deliver more power within limited board space and strict thermal constraints. EPC2366 was developed specifically for ultra-high density 1.5–2 kW 48 V-to-12 V, or 10 kW 800 V-to-12 V, intermediate bus converter modules used in AI data center applications. With a 48 V repetitive spike rating, 360 A surge-current capability, 16 mΩ·nC RQoss figure of merit, and zero diode reverse recovery, the EPC2366 is ideal for 500 kHz to 1 MHz hard-switching, high-density DC-DC conversion.
Entry ID: 7490
